CVD System
175,000 Per Piece
Chemical Vapor Deposition System
1,200,000 Per unit
1 unit (MOQ)
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Metal Chemical Vapor Deposition system
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Valence Process Equipment offers both production and research-sized MOCVD reactor systems for Group III-Nitride and InGaAl-AsP material systems. We can provide a high degree of customization to suit your specific process requirements. Valence Process Equipment patented, 500-series platform features a non clogging, temperature-controlled showerhead gas injector, and our high symmetry, minimized-volume, non-recirculating pro led reactor, enabling production-level capacities with pilot-level gas and MO usage. Along with high speed wafer carrier rotation, rapid heating capability to 1200C, and high-velocity, uniform- fluid gaps providing efficient heat removal and uniform wall temperatures, the 500-series provides state-of-the-art epitaxial materials properties and uniformities at unbeatable efficiencies. CAPACITY SPECIFICATIONS: – 250- series capacity – 10x2in, 5x3in, 3x4in, 1x6in, 1x8in – 500-series capacity – 72x2in, 20x4in, 7x6in, 4x8in FACILITY SERVICES: – 208 and 380 VAC, 3- Phase Power – Purified N2, H2, and NH3 Gases – Cooling Water Recirculation Loop – Cabinet and Exhaust Ventilation MATERIAL SPECIFICATIONS: – GaN, InGAN, AIGaN, AIN – 2 in., 3 in., 6 in., 8 in. Substrates – Sapphire, Silicon, Silicon Carbide.
Chemical Vapor Deposition System
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Chemical vapor deposition (CVD) allows a thin film to be grown on a substrate through molecules and molecular fragments adsorbing and reacting on a surface. This example illustrates the modeling of such a CVD reactor where triethyl-gallium first decomposes, and the reaction products along with arsine (AsH3) adsorb and react on a substrate to form GaAs layers.The CVD system is modeled using momentum, energy, and mass balances including a detailed description of the gas phase and adsorption kinetics. A reduced reaction scheme is compared to the full scheme in the Reaction Engineering interface.