Electronic Active Devices Dealers in Hoodi, Bangalore

• Brand Name: Ultrananotech
• Condition: New
• Application: Industrial, Laboratory
• Feature: Durable, High Quality, Long Life
• Country of Origin: India

FEATURES Growth method: CVD synthesis Polymer assisted transfer Chip dimensions: 10 mm x 10 mm Chip thickness: 675 μm Number of GFETs per chip: 27 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Dielectric Constant of the SiO2 layer: 3.9 Resistivity of substrate: 1-10 Ω.cm Metallization: Au contacts Graphene field-effect mobility: >1000 cm2/V.s Dirac point: <50 V Minimum working devices: >75 %

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