Graphene Oxide Dealers in Bangalore

• Growth Method: CVD synthesis
• Appearance (color): Transparent
• Transparency: > 97%
• Number of Graphene Layers: 1
• Thickness (theoretical): 0.345 nm
• Sheet Resistance on SiO2/Si: 450±40 Ohms/sq (1cm x1cm)
• Grain size: Up to 20 μm

Description: Monolayer Graphene on Cu – Processed in Clean Room Class 1000 This product consist on a single-layer graphene grown on copper foil substrate. FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 /Vs (doi: http://dx.doi.org/10.1063/1.4972847) FET Electron Mobility on SiO2/Si: 3760 cm2/Vs DOI: https://doi.org/10.1103/PhysRevLett.119.066802   Available Sizes: 6” Wafer 4” Wafer 60 mm x 40 mm 10 mm x 10 mm – Pack of 4 1 inch x 1 inch 12 mm Circular – Pack of 4