GFET-S20 for Sensing Applications
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100 Piece (MOQ)
FEATURE GFET-S20 (Die size 10 mm x 10 mm) Processed in Clean Room Class 1000 Growth method: CVD synthesis Polymer assisted transfer Chip dimensions: 10 mm x 10 mm Chip thickness: 675 μm Number of GFETs per chip: 12 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Resistivity of substrate: 1-10 Ω.cm