GFET-S22 for Sensing Applications
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100 Piece (MOQ)
FEATURE Growth method: CVD synthesis Polymer assisted transfer Chip dimensions: 10 mm x 10 mm Chip thickness: 675 μm Number of GFETs per chip: 12 in parallel Gate oxide thickness: 90 nm Gate oxide material: SiO2 Resistivity of substrate: 1-10 Ω.cm Metallization: Au contacts Graphene field-effect mobility: >1000 cm2/V.s Encapsulation: 50 nm Al2O3 Dirac point (liquid gating): <1V Minimum working devices: >75 %
Microchip
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