Chemical Vapor Deposition System Dealers

CVD System

175,000 Per Piece

• Warranty: 1 Year
• Automation Grade: Automatic
• Power Source: Electric
• Material: Stainless Steel
• Grade: 304
• Mount Type: Free Stand

Chemical Vapour Deposition machine

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• Power: 10 Kw
• Automation Grade: Automatic
• Atmosphere: Air and Inert
• Number of Zone: Single or Three Zone
• Mass Flow Controller: Universal Type

Chemical Vapor Deposition System

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1 Piece (MOQ)

• Design Type: Standard, Customised
• Brand/Make: VBCC
• Automation Grade: Automatic
• Model: CVDVBCC
• Capacity: 1200
• Features: Cobalt nanoparticles, Stable, Super-paramagnetic, Suitable for nanotechnology applications, Indigenously developed susceptor for reliable heat generation, Imported / indigenized Insulation
• Working Temperature :  up to RT to 1800°C

Chemical Vapor Deposition System

1,200,000 Per unit

1 unit (MOQ)

• Design Type: Customised
• Brand/Make: EI
• Automation Grade: Manual
• Structure: Box (or) Cylindrical Horizontally
• Mounted Type: Mounted on Frame
• Number of Zones: Single / Two / Three
• Tube Quartz: 50 mm OD
• Tube Size: 1.2 Mtr Long
• Max. Temperature: Up to 11000 C
• Pump Type: Rotary Vacuum Pumping System
• Item Code: CVD

Metal Chemical Vapor Deposition system

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Valence Process Equipment offers both production and research-sized MOCVD reactor systems for Group III-Nitride and InGaAl-AsP material systems. We can provide a high degree of customization to suit your specific process requirements.   Valence Process Equipment patented, 500-series platform features a non clogging, temperature-controlled showerhead gas injector, and our high symmetry, minimized-volume, non-recirculating pro led reactor, enabling production-level capacities with pilot-level gas and MO usage. Along with high speed wafer carrier rotation, rapid heating capability to 1200C, and high-velocity, uniform- fluid gaps providing efficient heat removal and uniform wall temperatures, the 500-series provides state-of-the-art epitaxial materials properties and uniformities at unbeatable efficiencies. CAPACITY SPECIFICATIONS: – 250- series capacity – 10x2in, 5x3in, 3x4in, 1x6in, 1x8in – 500-series capacity – 72x2in, 20x4in, 7x6in, 4x8in FACILITY SERVICES: – 208 and 380 VAC, 3- Phase Power – Purified N2, H2, and NH3 Gases – Cooling Water Recirculation Loop – Cabinet and Exhaust Ventilation MATERIAL SPECIFICATIONS: – GaN, InGAN, AIGaN, AIN – 2 in., 3 in., 6 in., 8 in. Substrates – Sapphire, Silicon, Silicon Carbide.

Chemical Vapour Deposition Systems

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QrystalTM is a research grade chemical vapour deposition system, with 12 independent temperature zones, each capable of reaching temperatures upto 1150 °C. It has an inbuilt precision mass flow controller allowing controlled injection of upto 4 gases. A back pressure regulator allows a fixed controlled pressure to be maintained throughout the deposition chamber.   Furnace : QBAKE-1100-3 Independent Heating Zones : 12 Maximum Temperature : 1150 °C for transient, 1100 °C for continuous operation Uniform Temperature Zone Length : 200 mm Temperature Uniformity : Better than ±5 °C within a zone Heater Wire Material : Kanthal Process Tube Material : Quartz Process Tube Diameter : ID = 45 mm, OD = 48 mm Embedded Temperature Sensor : K-type Thermocouple Temperature Controller : TCON-12 Sensor Channels : 16 Sensor Type : K-type Thermocouple (or PT100) Independent Control Loops : 12 Control Algorithm : Floating Point P-I-D Temperature Stability : Better than 0.1 °C PID Auto-tune : Yes Heater Drive : 220V, 50 Hz Vacuum System : VAC-10E-2 Pump Type : 2-stage, Rotary Pump Pump Throughput : 15 m3/hour Ultimate Vacuum : 10m-3 mBar Vacuum Sensor : Pirani Gauge and ±15 psi tube pressure sensor mounted at the end of the quartz tube Chamber Isolation : Butterfly Valve Mass Flow Controller : MF02 Number of Channels : 4 Channel 1, 2 : 0-1000 sccm Auxilliary Valves : 2/channel, one in series for true shutoff, one in parallel for flushing Flow Stability : Better than 0.1% of full scale

Chemical Vapor Deposition System

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Chemical vapor deposition (CVD) allows a thin film to be grown on a substrate through molecules and molecular fragments adsorbing and reacting on a surface. This example illustrates the modeling of such a CVD reactor where triethyl-gallium first decomposes, and the reaction products along with arsine (AsH3) adsorb and react on a substrate to form GaAs layers.The CVD system is modeled using momentum, energy, and mass balances including a detailed description of the gas phase and adsorption kinetics. A reduced reaction scheme is compared to the full scheme in the Reaction Engineering interface.

Chemical Vapor Deposition System

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• Features: Low maintenance, Easy to install, Rigid design, Top performance, Longer working life

Chemical Vapor Deposition System

4,000,000 Per Piece

• Voltage: 220V 50 Hz
• Brand/Make: Technos Instruments
• Automation Grade: Semi-Automatic
• Gas Channel: Multiple
• Temperature (deg. Celsius): 2400 C
• Item Code: HWCVD

Thermal Cvd System

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We are offering all types of thermal cvd that are available from us at very nominal rates.

Chemical Vapor Deposition System

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Chemical Vapor Deposition System, cvd diamond, Lab Grown Diamond

Plasma Enhanced CVD System

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Plasma Enhanced CVD System, sputtering system, Lens Holder